HRL Laboratories, an IBM company, pioneers the next frontiers of physical and information science. Delivering transformative technologies in automotive, aerospace and defense, HRL advances the critical missions of its customers to help them remove limitations and create competitive advantage. HRL then transitions the work back to customers – ready for real-world application. For more than 70 years, HRL’s rich portfolio of scientific discoveries and engineering innovations continues to build on each other — often in unexpected, profound and far-reaching ways. As a private company owned by IBM, HRL prioritizes purpose over profit, significantly advancing the state of the art.

HRL Laboratories develops radio frequency, millimeter-wave and electro-optical sensors using state-of-the-art materials and device fabrication processes to deliver agile, mission-ready systems. Our high-performance solutions are highly integrated, architecturally low cost, and optimized for size, weight and power efficiency while leveraging commercial, custom and novel mixed-signal innovations.

Position Summary

HRL Laboratories is looking for a creative and motivated device modeling engineer to join a world-class team of scientists and engineers developing next-generation technologies. In this role, you will push on the frontier of understanding quantum control and transport in semiconductor devices, working in tight feedback loops with fabrication and test efforts. You will utilize both commercial and proprietary device simulation tools to model state-of-the-art electronic technologies like FinFETs and gate-all-around transistors, as well as design and analyze a variety of other classical and quantum nanodevices, including semiconductor spin qubits. Particular areas of focus include understanding semiclassical and quantum transport, electrostatic integrity, and response to device stressors such as heat and strain to predict and optimize performance and interpret experimental data.

Required Qualifications

Ph.D. in Electrical Engineering, Applied Physics, or a related discipline

Experience with commercial semiconductor TCAD (technology computer-aided design) tools such as Sentaurus Device and Process as well as general purpose multiphysics simulation software (such as COMSOL)

Strong fundamental understanding of Silicon CMOS Nodes/ Transistors

Expertise in fundamental theory and computational modeling of the electronic, optical, thermal, and magnetic properties of semiconductor materials and devices.

Experience with commercial multiphysics simulation software

Ability to collaborate and communicate effectively with fellow team members, present ideas and results in technical presentations, and contribute to written research reports

Preferred Qualifications

Familiarity with material systems beyond silicon, i.e. III-V, wide bandgap, or ultra-wide bandgap semiconductors.

Experience developing and applying semiclassical and quantum transport techniques for semiconductor devices such as the Boltzmann transport equation (BTE) and non-equilibrium Green’s functions (NEGF)

Background in collaborative code development utilizing multiple computer languages, including C++ and Python.

Applied knowledge of numerical analysis and scientific computing techniques, including high-performance computing platforms

Detailed understanding of semiconductor fabrication and characterization techniques, such as epitaxial growth, lithography, electrical characterization, optical spectroscopy, and/or microscopy

Strong understanding of semiconductor process flow, layout, and basic circuit design/simulation

Experience in device design for extreme environments such as cryogenic, radiation, or high temperature

Physical Requirements

Ability to spend extended periods of time at a computer monitor.

Excellent written and verbal communication skills

Ability to work in a fast-paced environment with other team members

Excellent problem-solving skills

Special Requirements

US Citizenship.

Ability to obtain and maintain a US Government Security Clearance.